One way to reduce power loss in power semiconductors is to reduce the distance through which the electricity flows by making a thinner substrate element. This series uses a SiC (silicon carbide) substrate with a reduced thickness of approximately one-third of FE’s conventional 1st-generation SiC-SBD Series as well as a modified chip structure, which has successfully reduced steady-state loss by 16%.* FE has achieved one of the industry’s thinnest substrates by applying its proprietary processing technology. It has also improved resistance to large currents caused by lightning. These measures contribute to energy saving and better reliability of the equipment that uses this product.
^＊额定电压650 V的产品